View R5011ANJ_91406.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

10V Drive Nch MOSFET
R5011ANJ
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy.
7.25
13.1
3.0
1.0
1.24
9.0
0.78
5.08
2.7
(1) Gate (2) Drain (3) Source
(1) (2) (3) Each lead has same dimensions
LPTL
8.9 4.8
Applications Switching
(1) Gate (2) Drain (3) Source
(1) (2) (3) Each lead has same dimensions
Packaging specifications
Package Type Code Basic ordering unit (pieces) Taping LPTS LPTL 1000 TL TLL
Inner circuit
1
(1)
(2)
(3)
(1) Gate (2) Drain (3) Source
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum temperature allowed
1 Body Diode
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
3 1 3 1 2 2
Limits 500 30 11 44 11 44 5.5 8.1 75 150 -55 to +150
Unit V V A A A A A mJ W C C
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 1.67 Unit C/W
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
1.2
2.54
0.4
1/5
2009.04 - Rev.A
R5011ANJ
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Min. - 500 - 2.5 - 3.5 - - - - - - - - - -
Typ. - - - - 0.38 - 1000 400 35 26 28 75 30 30 7 12
Max. 100 - 100 4.5 0.5 - - - - - - - - - - -
Unit nA V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=5.5A, VGS=10V VDS=10V, ID=5.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=5.5A VGS=10V RL=45.5 RG=10 VDD 250V ID=11A VGS=10V RL=22.7 / RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.5
Unit V
Conditions IS= 11A, VGS=0V
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.04 - Rev.A
R5011ANJ
Electrical characteristic curves
100 Operation in this area is limited by RDS(ON) PW=100us PW=1ms PW=100ms 1 DC operation 0.1 Tc = 25C Single Pulse 0.01 0.1 1 10 100 1000
Data Sheet
20 Ta= 25C Pulsed 15 6.5V 10 5.5V 5.0V VGS= 4.5V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2 Typical Output Characteristics() 10V 8.0V 7.0V 6.0V DRAIN CURRENT: ID (A)
10 8 6 4 2 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3 Typical Output Characteristics() Ta= 25C Pulsed 8.0V 7.0V 6.5V 6.0V 5.0V VGS= 4.5V 5.5V 10V
DRAIN CURRENT : ID (A)
10
DRAIN CURRENT: ID (A)
5
DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera
DRAIN CURRENT : ID (A)
10 Ta= 125C Ta= 75C Ta= 25C Ta= -25C
5 4 3 2 1 0 -50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VDS= 10V Pulsed
GATE THRESHOLD VOLTAGE: VGS(th) (V)
100
6 VDS= 10V ID= 1mA
10 VGS= 10V Pulsed 1
1
0.1
0.1
0.01
Ta= 125C Ta= 75C Ta= 25C Ta= -25C
0.001 0 1.5 3 4.5 6
0.01 0.1 1 10 100
0
50
100
150
GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (C) Fig.5 Gate Threshold Voltage vs. Channel Temperature
DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 ID= 5.5A
0.8
VGS= 10V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
Ta=25C Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
1
1
100 VDS= 10V Pulsed 10
0.6
ID= 11.0A
ID= 11.0A
1 Ta= -25C Ta= 25C Ta= 75C Ta= 125C
0.4 ID= 5.5A 0.2
0.1
0 10 15 -50 0 50 100 150
0.01 0.01 0.1 1 10 100
GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage
CHANNEL TEMPERATURE: Tch (C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature
DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.04 - Rev.A
R5011ANJ
REVERSE DRAIN CURRENT : IDR (A) 100 VGS= 0V Pulsed 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 Ta= 25C VDD= 250V ID= 11A RG= 10 Pulsed
Data Sheet
CAPACITANCE : C (pF)
10
1000 Coss 100 Crss Ta= 25C f= 1MHz VGS= 0V 0.1 1 10
Ciss
10
1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C
5
0.1
10
0.01 0 0.5 1 1.5
1 100 1000
0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics
SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
REVERSE RECOVERY TIME: trr (ns)
1000
10000 tf 1000 td(off) 100
100 Ta= 25C di / dt= 100V / s VGS= 0V Pulsed 10 0.1 1 10 100
SWITCHING TIME : t (ns)
Ta= 25C VDD= 250V VGS= 10V RG= 10 Pulsed
10 tr 1 0.01 0.1 1 10 100 td(on)
REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current
DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
1 Ta = 25C Single Pulse : 1Unit Rthch-at = txRthch-a Rthch-a = 45.8C/W
0.1
0.01
0.001
0.0001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.04 - Rev.A
R5011ANJ
Switching characteristics measurement circuit
Pulse width
VGS ID RL D.U.T. RG VDD VDS
Data Sheet
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
VG
VGS ID RL IG(Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
VGS
IAS L
VDS
VD(BR)DSS
D.U.T. RG
IAS VDD EAS = 1 2 L IAS
2
VD(BR)DSS VD(BR)DSS - VDD
Fig.3-1 Avalanche Measurement circuit
Fig.3-2 Avalanche waveform
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.04 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved.
R0039A

▲Up To Search▲

Price & Availability of R5011ANJ

	To Download R5011ANJ Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .